基于45纳米CMOS技术的高速MCML逻辑门与多路复用器设计

M. Sivasakthi, P. Radhika
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引用次数: 0

摘要

电流模式逻辑(CML)通常用于高速电路。这是一种差分数字逻辑,用于设计逆变器、缓冲器和门,以及板级数字数据的信令。在各种类型的CML电路中,在各种数字电路设计中,通常实现MOS电流模式逻辑(MCML)。这种逻辑也可以用于设计寄存器和存储单元。本文设计了一种新型的MOS CML电路,该电路采用基于翻转电压跟随器的三态电路,用于逆变/缓冲和and /NAND逻辑以及高速复用器。采用Cadence virtuoso工具在45 nm工艺下,在1V电源和27°C温度下对所提出的MCML逻辑门进行了分析。通过蒙特卡罗直方图模拟验证了结果。在45nm CMOS工艺下,模拟比较了传统、现有和拟议结构在不同角落的工艺变化。结果表明,该电路具有较高的性能,可在高速环境下工作。
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A High-Speed MCML Logic Gate and Multiplexer Design in 45 nm CMOS Technology
Current Mode Logic (CML) is generally utilized for high-speed circuits. This is a differential digital logic used to design inverters, buffers and gates, as well as the board-level signaling of digital data. Among the various types of CML circuits, in various digital circuit designs, MOS Current Mode Logic (MCML) is generally implemented. This logic can also be used to design registers and memory units. In this paper, a novel MOS CML circuit is designed using a flipped voltage follower-based tri-state circuit for Inverter/Buffer and AND/NAND logic and also for the high-speed multiplexer. The proposed MCML logic gate is analyzed using the Cadence virtuoso tool in 45 nm technology at 1V power supply and a temperature of 27°C. The results are verified with Monte Carlo simulations using a histogram plot. The process variations for different corners are simulated and compared for the conventional, existing and proposed structures under 45 nm CMOS technology. The result proves that the proposed circuit provides high performance and operates in a high-speed environment.
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