Y. Komine, Y. Yoshida, M. Hibino, Y. Hisa, R. Ohkata, K. Ikeda, W. Susaki, K. Yasumura, K. Sato
{"title":"cd0.2 hg0.8外延层用于高探测率pc型红外探测器","authors":"Y. Komine, Y. Yoshida, M. Hibino, Y. Hisa, R. Ohkata, K. Ikeda, W. Susaki, K. Yasumura, K. Sato","doi":"10.1109/IRMM.1987.9127004","DOIUrl":null,"url":null,"abstract":"High quality n-type Cd<inf>0.2</inf>Hg <inf>0.8</inf>Te epi-layers doped with In below 0.1 ppm, whose carrier concentration and mobility at 77 K are below 4×10<sup>14</sup> cm<sup>−3</sup> and over 2× 10<sup>5</sup> cm<sup>2</sup>/V·S, respectively, have been grown by LPE on CdTe (111) B substrates with EPDs below 10<sup>5</sup> cm<sup>−2</sup>. A new result obtained is that long carrier diffusion length is essentially important for realizing a high performance detector, whose detectivity reaches to D∗BLIP.","PeriodicalId":399243,"journal":{"name":"1987 Twelth International Conference on Infrared and Millimeter Waves","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cd0.2hg0.8te epi—layer for a high detectivity pc—type ir detector\",\"authors\":\"Y. Komine, Y. Yoshida, M. Hibino, Y. Hisa, R. Ohkata, K. Ikeda, W. Susaki, K. Yasumura, K. Sato\",\"doi\":\"10.1109/IRMM.1987.9127004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High quality n-type Cd<inf>0.2</inf>Hg <inf>0.8</inf>Te epi-layers doped with In below 0.1 ppm, whose carrier concentration and mobility at 77 K are below 4×10<sup>14</sup> cm<sup>−3</sup> and over 2× 10<sup>5</sup> cm<sup>2</sup>/V·S, respectively, have been grown by LPE on CdTe (111) B substrates with EPDs below 10<sup>5</sup> cm<sup>−2</sup>. A new result obtained is that long carrier diffusion length is essentially important for realizing a high performance detector, whose detectivity reaches to D∗BLIP.\",\"PeriodicalId\":399243,\"journal\":{\"name\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMM.1987.9127004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 Twelth International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMM.1987.9127004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cd0.2hg0.8te epi—layer for a high detectivity pc—type ir detector
High quality n-type Cd0.2Hg 0.8Te epi-layers doped with In below 0.1 ppm, whose carrier concentration and mobility at 77 K are below 4×1014 cm−3 and over 2× 105 cm2/V·S, respectively, have been grown by LPE on CdTe (111) B substrates with EPDs below 105 cm−2. A new result obtained is that long carrier diffusion length is essentially important for realizing a high performance detector, whose detectivity reaches to D∗BLIP.
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