A. Huynh, B. Sedighi, H. T. Duong, H. V. Le, E. Skafidas
{"title":"65纳米CMOS中400 μ w 3-GHz比较器","authors":"A. Huynh, B. Sedighi, H. T. Duong, H. V. Le, E. Skafidas","doi":"10.1109/RFIT.2012.6401633","DOIUrl":null,"url":null,"abstract":"This paper presents a high-speed clocked regenerative comparator designed in 65-nm CMOS process. The kickback noise caused by large variations at the regeneration nodes is suppressed using an intermediate stage. An extra switch is added between regeneration nodes to further equate their voltages when the comparator is at reset phase. The measured results show that the proposed comparator is able to achieve a Bit Error Rate (BER) of 2 × 10-9 at a sensitivity of 12 mV at 1.4 GHz and 30 mV at 3 GHz. The power consumption of the proposed comparator is 75 μW at 500 MHz and 400 μW at 3 GHz.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 400-μW 3-GHz comparator in 65-nm CMOS\",\"authors\":\"A. Huynh, B. Sedighi, H. T. Duong, H. V. Le, E. Skafidas\",\"doi\":\"10.1109/RFIT.2012.6401633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high-speed clocked regenerative comparator designed in 65-nm CMOS process. The kickback noise caused by large variations at the regeneration nodes is suppressed using an intermediate stage. An extra switch is added between regeneration nodes to further equate their voltages when the comparator is at reset phase. The measured results show that the proposed comparator is able to achieve a Bit Error Rate (BER) of 2 × 10-9 at a sensitivity of 12 mV at 1.4 GHz and 30 mV at 3 GHz. The power consumption of the proposed comparator is 75 μW at 500 MHz and 400 μW at 3 GHz.\",\"PeriodicalId\":187550,\"journal\":{\"name\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2012.6401633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a high-speed clocked regenerative comparator designed in 65-nm CMOS process. The kickback noise caused by large variations at the regeneration nodes is suppressed using an intermediate stage. An extra switch is added between regeneration nodes to further equate their voltages when the comparator is at reset phase. The measured results show that the proposed comparator is able to achieve a Bit Error Rate (BER) of 2 × 10-9 at a sensitivity of 12 mV at 1.4 GHz and 30 mV at 3 GHz. The power consumption of the proposed comparator is 75 μW at 500 MHz and 400 μW at 3 GHz.
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