采用薄膜金属化绕组头支架改善绕组绝缘,用于快速开关sic电压逆变器驱动

F. Liebetrau, C. Weber, Christian Wachter, F. Rinderknecht, H. Friedrich
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引用次数: 1

摘要

为了避免电场强度过大而导致绕组绝缘失效,本文提出了一种采用薄膜表面金属化的绕组头支撑设计。卷绕头支架的基础材料是高性能塑料,如聚醚醚酮(PEEK)或高温树脂,具有良好的耐热能力和低导电性,以尽量减少涡流损耗。为了同样的目的,采用薄膜技术制造支撑的金属化层。研究工作的重点是提高绝缘系统的介电强度。静电有限元计算是为了估计电场强度在定子边缘区域的分布。在这项工作中,还考虑了金属化层内的涡流损耗。虽然支架的导电膜厚度小于100微米[1],但非常薄,加热,特别是在绕组头区域,可能会导致结构和寿命问题。鉴于此,有关涡流损耗和热分布的有限元模拟正在进行中。
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Winding insulation improvement by thin film metalized winding head support for fast switching SiC-voltage inverter drives
This paper proposes a winding head support design with a thin film surface metallization for edge rounding to avoid high electric field strengths and thereby winding insulation failures. Base materials of the winding head support are high performance plastics like polyetheretherketone (PEEK) or high temperature resins with good heat resistance capabilities and a low electrical conductivity to minimize eddy current losses. The metallization layer of the support is manufactured in thin film technology for the same purpose. The main focus of the work lies on investigating the improvement of dielectric strength of the insulation system. Electrostatic FEM-calculations are being conducted to estimate the distribution of the electric field strength in the area of the stator edges. Within this work eddy current losses inside the metallization layer are also considered. Although the conductive film of the support is with a thickness fewer than 100 microns [1] very thin, heating, especially in the area of the winding head, may cause structural and lifetime issues. On this account, FEM-simulations regarding eddy current losses and thermal distributions are being progressed.
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