一种用于脑电图的CMOS低功耗宽带Gm-C陷波滤波器

J. A. Costa, T. Pimenta
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引用次数: 4

摘要

介绍了一种用于脑电图系统中抑制电力线干扰的CMOS Gm-C陷波滤波器。通带覆盖了脑电波的所有四个波段,其带宽为2.17 kHz,可以对不太感兴趣的频率进行深入研究。除此之外,电容可编程电路使滤波器能够抑制50 Hz或60 Hz的电力线干扰,抑制频率超过90 dB。陷波滤波器采用在弱区工作的运算跨导放大器,跨导为1.259 nA/V,可以使用小型电容器进行片上集成。在这个项目中,我们设计了一个0.13 μm CMOS技术的电路,用于1.0 V电源和10na偏置电流。在CADENCE (Virtuoso Analog Design Environment)上进行的仿真表明,该滤波器对采集的脑电信号中的噪声具有良好的滤波效果。
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A CMOS low-power wider band Gm-C notch filter for EEG
A CMOS Gm-C Notch filter for powerline interference rejection in EEG systems is described. The pass-band covers all the four bands of brain wave and, with a bandwidth of 2.17 kHz, enables a deep study of the frequencies of less interest. Besides that, a capacitor programmable circuit makes the filter possible to reject with more than 90 dB the powerline interference for 50 Hz or 60 Hz. The notch filter employs operational transconductance amplifiers working in the weak region, with transconductance of 1.259 nA/V, enabling the use of small capacitors for on-chip integration. In this project, we designed a circuit in 0.13 μm CMOS technology, for a 1.0 V power supply and 10 nA bias current. Simulations conducted on CADENCE (Virtuoso Analog Design Environment) show good performance of the filter for filtering the noise in acquired EEG signals.
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