{"title":"栅极电荷公式在大信号PHEMT建模中的重要性","authors":"R. Mallavarpu, D. Teeter, M. Snow","doi":"10.1109/GAAS.1998.722634","DOIUrl":null,"url":null,"abstract":"A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The importance of gate charge formulation in large-signal PHEMT modeling\",\"authors\":\"R. Mallavarpu, D. Teeter, M. Snow\",\"doi\":\"10.1109/GAAS.1998.722634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The importance of gate charge formulation in large-signal PHEMT modeling
A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.
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