等离子体辅助分子束外延生长GaN功率开关器件

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) Pub Date : 2002-12-10 DOI:10.1109/IAS.2002.1044143

C. Park, P. Chapman, S. Rhee, S. J. Hong, X. Zhang, P. Krein, K. Kim

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引用次数: 2

摘要

介绍了基于氮化镓衬底的结场效应晶体管(jfet)和高电子迁移率晶体管(hemt)。该器件是用等离子体辅助分子束外延(PAMBE)生长的，将用于功率开关应用。生长出高质量的p型和n型薄膜。一些测试结果显示表面光滑和成功加工肖特基二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaN power switching device growth by plasma assisted molecular beam epitaxy

Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes.

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Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)

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