C. Harris, P. Ericsson, S. Savage, A. Konstantinov, M. Bakowski
{"title":"实现SiC器件的潜力","authors":"C. Harris, P. Ericsson, S. Savage, A. Konstantinov, M. Bakowski","doi":"10.1109/WBL.2001.946555","DOIUrl":null,"url":null,"abstract":"Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Realising the potential of SiC devices\",\"authors\":\"C. Harris, P. Ericsson, S. Savage, A. Konstantinov, M. Bakowski\",\"doi\":\"10.1109/WBL.2001.946555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.\",\"PeriodicalId\":315832,\"journal\":{\"name\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WBL.2001.946555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
