n型Bi2Se3晶须弱反局域化模型

A. Druzhinin, Y. Khoverko, I. Ostrovskii, N. Liakh-Kaguy
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引用次数: 1

摘要

研究了钯钯掺杂的n型导电Bi2Se3晶须在低至1.5 K时的温度依赖性,其浓度为$(1\div 2)\ × 10^{19}\text{cm}^{-3}$,对应于金属-绝缘体跃迁(MIT)的金属侧。在5.3 K温度下,晶须电阻的温度依赖性急剧下降。在1.5\div 77\text{K}$的温度范围内观察到电子局域化、近藤效应和超导性等效应的贡献。在磁场$0\div 10\text{T}$和温度范围相同的条件下,测量了掺杂不同Pd浓度的n型导电Bi2Se3晶须的磁阻。弱反局域化模型被认为是由于n型电导率Bi2Se3晶须中表面自旋轨道相互作用导致的磁导研究的结果。
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Weak Antilocalization Model of N-Type Bi2Se3 Whiskers
Temperature dependencies of the n-type conductivity Bi2Se3 whiskers doped with palladium Pd dopant to the concentration of $(1\div 2)\times 10^{19}\text{cm}^{-3}$ which correspond to the metal side of the metal-insulator transition (MIT) were studied at low temperatures down to 1.5 K. The sharp drop was revealed on the temperature dependencies of the whiskers resistance at temperature of 5.3 K. The contribution of some effects as an electron localization, Kondo effect and the superconductivity were observed in the temperature range $1.5\div 77\text{K}$. The magnetoresistance in the n-type conductivity Bi2Se3 whiskers doped with different Pd concentration were measured in the magnetic field $0\div 10\text{T}$ and the same temperature range. The weak antilocalization model was considered as result of the magnetoconductance studies due to surface spin-orbit interaction in the n-type conductivity Bi2Se3 whiskers.
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