{"title":"一种HR-SEM样品制备方法及其在晶圆制造中沟槽TEOS测量失效分析中的应用","authors":"Z. Siping, H. Younan, Mo Zhi-qiang, Cho Jie Ying","doi":"10.1109/SMELEC.2006.380687","DOIUrl":null,"url":null,"abstract":"To identify nitride from oxide layer on the trench, it is necessary to perform BOE chemical staining. However, chemical staining using BOE will damage the oxide layer, causing inaccurate readings in the oxide gauging measurement in the trench. Moreover, damage on the oxide layer caused heavy charging at the side of the trench and the surface of oxide layer. In this paper, we proposed to coat a Cr layer over the trench before chemical staining. The damage problem was eliminated and the measurement of oxide gauging was more accurate. A application case is discussed for trench TEOS gauging measurement.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Studies on A Sample Preparation Method for HR-SEM and Application in Failure Analysis of Trench TEOS Gauging Measurement in Wafer Fabrication\",\"authors\":\"Z. Siping, H. Younan, Mo Zhi-qiang, Cho Jie Ying\",\"doi\":\"10.1109/SMELEC.2006.380687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To identify nitride from oxide layer on the trench, it is necessary to perform BOE chemical staining. However, chemical staining using BOE will damage the oxide layer, causing inaccurate readings in the oxide gauging measurement in the trench. Moreover, damage on the oxide layer caused heavy charging at the side of the trench and the surface of oxide layer. In this paper, we proposed to coat a Cr layer over the trench before chemical staining. The damage problem was eliminated and the measurement of oxide gauging was more accurate. A application case is discussed for trench TEOS gauging measurement.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Studies on A Sample Preparation Method for HR-SEM and Application in Failure Analysis of Trench TEOS Gauging Measurement in Wafer Fabrication
To identify nitride from oxide layer on the trench, it is necessary to perform BOE chemical staining. However, chemical staining using BOE will damage the oxide layer, causing inaccurate readings in the oxide gauging measurement in the trench. Moreover, damage on the oxide layer caused heavy charging at the side of the trench and the surface of oxide layer. In this paper, we proposed to coat a Cr layer over the trench before chemical staining. The damage problem was eliminated and the measurement of oxide gauging was more accurate. A application case is discussed for trench TEOS gauging measurement.