{"title":"最新的全差分放大器采用0.35 μm SiGe BiCMOS技术，用于超宽带应用","authors":"M. Liptaj, P. Galajda, M. Kmec","doi":"10.1109/RADIOELEK.2011.5936454","DOIUrl":null,"url":null,"abstract":"The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufactured chip will be a part of the set of ASIC circuits designed for implementation in the recent UWB radar system architectures.","PeriodicalId":267447,"journal":{"name":"Proceedings of 21st International Conference Radioelektronika 2011","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications\",\"authors\":\"M. Liptaj, P. Galajda, M. Kmec\",\"doi\":\"10.1109/RADIOELEK.2011.5936454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufactured chip will be a part of the set of ASIC circuits designed for implementation in the recent UWB radar system architectures.\",\"PeriodicalId\":267447,\"journal\":{\"name\":\"Proceedings of 21st International Conference Radioelektronika 2011\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 21st International Conference Radioelektronika 2011\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADIOELEK.2011.5936454\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 21st International Conference Radioelektronika 2011","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADIOELEK.2011.5936454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications
The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufactured chip will be a part of the set of ASIC circuits designed for implementation in the recent UWB radar system architectures.
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