GaN垂直超结HEMT的鲁棒性

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694484

Zhongda Li, T. Chow

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引用次数: 1

摘要

我们利用数值模拟检验了新型增强模式GaN垂直超结HEMT的鲁棒性，并将其与传统漂移区域的GaN垂直HEMT进行了比较。这种新型增强模式GaN垂直超结HEMT之前已经设计并预计其最佳Ron, sp为4.2 mQ-cm2, BV为12.4kV。柱宽为8 μm的GaN垂直超结HEMT的导通电流水平提高了7倍，Ron, sp的1/5。模拟的GaN垂直超结HEMT的导通击穿电压比导通击穿电压下降了4.5%，仅略高于常规GaN垂直HEMT的1.7%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Robustness of GaN vertical superjunction HEMT

We have examined the robustness of the novel enhancement-mode GaN vertical superjunction HEMT using numerical simulations, which has been designed previously and projected to have best Ron, sp of 4.2 mQ-cm2 and BV of 12.4kV, and compared it with a GaN vertical HEMT with conventional drift region. The GaN vertical superjunction HEMT with 8 μm pillar width shows 7X higher on-state current level and 1/5 of the Ron, sp compared with The simulated on-state breakdown voltage of the GaN vertical superjunction HEMT structure shows 4.5% drop from the off-state breakdown voltage, and is only slightly higher than the 1.7% drop of the conventional GaN vertical HEMT.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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