利用64K DRAM芯片矩阵预测氧化物故障率

22nd International Reliability Physics Symposium Pub Date : 1984-04-01 DOI:10.1109/IRPS.1984.362027

D. Wendell, D. Segers, Billy Wang

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引用次数: 6

摘要

氧化物的长期完整性和稳定性是MOS可靠性的首要考虑因素。本文提出了一种原位预测薄膜热氧化物故障率的测试方法。该方法与标准加速装置研究相关联。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Predicting Oxide Failure Rates using the Matrix of a 64K DRAM Chip

Long-term integrity and stability of oxides is of prime concern in MOS reliability. This paper presents a test method for the in-situ prediction of thin film thermal oxide failure rates. The method is correlated with standard accelerated device studies.

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22nd International Reliability Physics Symposium

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