用于高空间分辨率高变形的柔性基板上的微晶硅量规

Y. Kervran, S. Janfaoui, O. Sagazan, S. Crand, N. Coulon, J. Gauthier, T. Mohammed-Brahim
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引用次数: 1

摘要

微晶硅薄膜被用作压阻材料来制造电阻和晶体管应变片。制造非常小的量规,允许以高灵敏度和空间分辨率测量高变形的可能性。最小尺寸为5 × 125 μm2的电阻计在施加高应变(0.55%,曲率半径5 mm)时,其应变系数为-24。场效应薄膜晶体管(TFT)规的规系数为-85,但在略低的应变下(0.45%,曲率半径为10 mm)。这个值接近由单晶硅制成的应变片(~100,关于绝对值),但它不灵活,因此不能支持高变形。TFT测量仪较为复杂的工艺过程可以保留其在需要高分辨率时测量低变形的用途,而在大变形范围内关注尺寸和灵敏度之间的混合时可以选择电阻测量仪。
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Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution
Microcrystalline silicon films are used as piezoresistive material to fabricate resistor and transistor strain gauges. Very small gauges are fabricated allowing the possibility to measure high deformations with both high sensitivity and spatial resolution. Resistor gauges with 5 × 125 μm2 smallest size showed a gauge factor of -24 when applying high strains (0.55%, radius of curvature 5 mm). Field effect thin film transistor (TFT) gauges showed a gauge factor of -85 but under slightly lower strains (0.45%, radius of curvature 10 mm). This value is close to strain gauges made of single crystalline silicon (~100, regarding the absolute value), but which are not flexible and then cannot support high deformations. The more complex technological process of TFT gauges could reserve their use to the measurement of low deformations when high resolution is required, while resistor gauges could be chosen when focusing on a mix between size and sensitivity in a large range of deformations.
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