具有电子阻挡层结构的双通道E-Mode AlGaN/GaN hemt

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126471

Yang-Hua Chang, Lu-Hao Yang

{"title":"具有电子阻挡层结构的双通道E-Mode AlGaN/GaN hemt","authors":"Yang-Hua Chang, Lu-Hao Yang","doi":"10.1109/EDSSC.2017.8126471","DOIUrl":null,"url":null,"abstract":"In this study, the threshold voltage and breakdown voltage of a double-channel AlGaN/GaN HEMT is improved. Firstly, depletion mode (D-mode) is changed to enhancement mode (E-mode) by optimizing the depth of the recessed gate, the Al ratio in the AlGaN layer, and the doping concentration of the p-doped region. Secondly, the E-mode device with highest breakdown voltage is selected, and then implemented with an electron-blocking layer (EBL) structure. The EBL structure is optimized to further improve the breakdown voltage.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Double-channel E-Mode AlGaN/GaN HEMTs with an electron-blocking-layer structure\",\"authors\":\"Yang-Hua Chang, Lu-Hao Yang\",\"doi\":\"10.1109/EDSSC.2017.8126471\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the threshold voltage and breakdown voltage of a double-channel AlGaN/GaN HEMT is improved. Firstly, depletion mode (D-mode) is changed to enhancement mode (E-mode) by optimizing the depth of the recessed gate, the Al ratio in the AlGaN layer, and the doping concentration of the p-doped region. Secondly, the E-mode device with highest breakdown voltage is selected, and then implemented with an electron-blocking layer (EBL) structure. The EBL structure is optimized to further improve the breakdown voltage.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126471\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本研究改进了双通道AlGaN/GaN HEMT的阈值电压和击穿电压。首先，通过优化凹栅的深度、AlGaN层中的Al比和p掺杂区掺杂浓度，将耗尽模式(d模式)转变为增强模式(e模式)。其次，选择击穿电压最高的e模器件，采用电子阻挡层(EBL)结构实现;优化了EBL结构，进一步提高了击穿电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Double-channel E-Mode AlGaN/GaN HEMTs with an electron-blocking-layer structure

In this study, the threshold voltage and breakdown voltage of a double-channel AlGaN/GaN HEMT is improved. Firstly, depletion mode (D-mode) is changed to enhancement mode (E-mode) by optimizing the depth of the recessed gate, the Al ratio in the AlGaN layer, and the doping concentration of the p-doped region. Secondly, the E-mode device with highest breakdown voltage is selected, and then implemented with an electron-blocking layer (EBL) structure. The EBL structure is optimized to further improve the breakdown voltage.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

自引率

0.00%

发文量