纳米nfet和pfet漏极和栅极电流中单捕集和去捕集效应的相关性

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241935

M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, P. Roussel, T. Grasser, G. Groeseneken

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引用次数: 39

摘要

在纳米级的pfet和nfet中，离散栅极和漏极电流波动的相关性被揭示，表明在相同的单一状态下的离散捕获和去捕获事件是ID和IG随机电报噪声(RTN)的原因。高、低栅极电流IG-RTN能级与温度无关，但开关速率热激活，表明捕获和去捕获事件符合非辐射多声子理论。

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Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs

The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both ID and IG random telegraph noise (RTN). The high and low gate current IG-RTN levels are independent of temperature but the switching rates thermally activated indicating that the trapping and detrapping events are consistent with nonradiative multiphonon theory.

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