{"title":"一种十字形垂直真空通道晶体管","authors":"Zhao Jin, Zhuoya Zhu, Wei Lei, Yi Xie","doi":"10.1109/iccss55260.2022.9802313","DOIUrl":null,"url":null,"abstract":"Vertical channel vacuum transistors are concerned due to high electron mobility, environmental resistance and compatibility with semiconductor processes. A new cross-shaped vertical channel vacuum transistor is proposed in this paper. The structure can effectively reduce gate leakage current and inter-electrode capacitance. Compared to previous structures of this type of device, cross-shaped structure has better emission efficiency and high-frequency performance.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Cross-shaped Vertical Vacuum Channel Transistor\",\"authors\":\"Zhao Jin, Zhuoya Zhu, Wei Lei, Yi Xie\",\"doi\":\"10.1109/iccss55260.2022.9802313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical channel vacuum transistors are concerned due to high electron mobility, environmental resistance and compatibility with semiconductor processes. A new cross-shaped vertical channel vacuum transistor is proposed in this paper. The structure can effectively reduce gate leakage current and inter-electrode capacitance. Compared to previous structures of this type of device, cross-shaped structure has better emission efficiency and high-frequency performance.\",\"PeriodicalId\":254992,\"journal\":{\"name\":\"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/iccss55260.2022.9802313\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iccss55260.2022.9802313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vertical channel vacuum transistors are concerned due to high electron mobility, environmental resistance and compatibility with semiconductor processes. A new cross-shaped vertical channel vacuum transistor is proposed in this paper. The structure can effectively reduce gate leakage current and inter-electrode capacitance. Compared to previous structures of this type of device, cross-shaped structure has better emission efficiency and high-frequency performance.
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