{"title":"亚微米mesfet噪声特性的分布分析","authors":"W. Heinrich","doi":"10.1109/MWSYM.1988.22042","DOIUrl":null,"url":null,"abstract":"A distributed MESFET noise analysis is presented and its results are used to determine the validity range of common lumped-element models. It is concluded that systematic investigation varying the equivalent-circuit elements within their realistic range confirmed that the distributed effects can be neglected in conventional submicron low-noise MESFETs. Practical gate-width design-values are given.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"49 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Distributed analysis of submicron-MESFET noise-properties\",\"authors\":\"W. Heinrich\",\"doi\":\"10.1109/MWSYM.1988.22042\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A distributed MESFET noise analysis is presented and its results are used to determine the validity range of common lumped-element models. It is concluded that systematic investigation varying the equivalent-circuit elements within their realistic range confirmed that the distributed effects can be neglected in conventional submicron low-noise MESFETs. Practical gate-width design-values are given.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"49 9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22042\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Distributed analysis of submicron-MESFET noise-properties
A distributed MESFET noise analysis is presented and its results are used to determine the validity range of common lumped-element models. It is concluded that systematic investigation varying the equivalent-circuit elements within their realistic range confirmed that the distributed effects can be neglected in conventional submicron low-noise MESFETs. Practical gate-width design-values are given.<>
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