基于0.13 μm CMOS工艺的数字校准电流-电压反馈晶体管

Ying-Zu Lin, Yen-Ting Liu, Soon-Jyh Chang
{"title":"基于0.13 μm CMOS工艺的数字校准电流-电压反馈晶体管","authors":"Ying-Zu Lin, Yen-Ting Liu, Soon-Jyh Chang","doi":"10.1109/ASSCC.2006.357875","DOIUrl":null,"url":null,"abstract":"A digitally calibrated transconductor for high-speed operation with its linearity enhanced by negative feedback is proposed. This voltage-to-current converter is mainly composed of two parts: an operational transconductance amplifier (OTA) and a pair of feedback resistors. The measured spurious free dynamic range (SFDR) of the transconductor is 72.6 dB when the input frequency is 100 MHz. To compensate common-mode deviation due to process variation, digital calibration circuits are added. Fabricated in TSMC 0.13-μm CMOS process, the transconductor occupies 250 × 200 μm2 active area and consumes 5.06 mW from a 1.2-V supply.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"213 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Digitally Calibrated Current-Voltage Feedback Transconductor in 0.13-μm CMOS Process\",\"authors\":\"Ying-Zu Lin, Yen-Ting Liu, Soon-Jyh Chang\",\"doi\":\"10.1109/ASSCC.2006.357875\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A digitally calibrated transconductor for high-speed operation with its linearity enhanced by negative feedback is proposed. This voltage-to-current converter is mainly composed of two parts: an operational transconductance amplifier (OTA) and a pair of feedback resistors. The measured spurious free dynamic range (SFDR) of the transconductor is 72.6 dB when the input frequency is 100 MHz. To compensate common-mode deviation due to process variation, digital calibration circuits are added. Fabricated in TSMC 0.13-μm CMOS process, the transconductor occupies 250 × 200 μm2 active area and consumes 5.06 mW from a 1.2-V supply.\",\"PeriodicalId\":142478,\"journal\":{\"name\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"213 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2006.357875\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

提出了一种采用负反馈增强线性度的高速运行数字式校准传感器。该电压-电流转换器主要由两部分组成:一个操作跨导放大器(OTA)和一对反馈电阻。当输入频率为100mhz时,测量到的无杂散动态范围(SFDR)为72.6 dB。为了补偿工艺变化引起的共模偏差,增加了数字校准电路。该晶体管采用TSMC 0.13 μm CMOS工艺制造,有效面积为250 × 200 μm2,功耗为5.06 mW,电源电压为1.2 v。
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A Digitally Calibrated Current-Voltage Feedback Transconductor in 0.13-μm CMOS Process
A digitally calibrated transconductor for high-speed operation with its linearity enhanced by negative feedback is proposed. This voltage-to-current converter is mainly composed of two parts: an operational transconductance amplifier (OTA) and a pair of feedback resistors. The measured spurious free dynamic range (SFDR) of the transconductor is 72.6 dB when the input frequency is 100 MHz. To compensate common-mode deviation due to process variation, digital calibration circuits are added. Fabricated in TSMC 0.13-μm CMOS process, the transconductor occupies 250 × 200 μm2 active area and consumes 5.06 mW from a 1.2-V supply.
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