脉冲宽度故障的硅测试策略

S. Vooka, Khushboo Agarwal, Abhijeet Shrivastava, P. Murthy, R. Venkatraman
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引用次数: 1

摘要

随着时钟频率增加到数千兆赫,并且需要在较低的电压下实现它以保持较低的工作功率,工作频率不仅受到数据路径延迟缩放的限制,而且受到时钟信号行为的限制。由于工作频率的增加和使用电压缩放技术来实现更高频率[1],在更高频率下,由于违反所需的最小时钟脉冲宽度而引起的故障更常见。由于时钟收缩导致的最小脉冲宽度违反引起的硅故障可能是由于各种原因造成的,从时钟发生器(PLL)的占空比失真到时钟路径上的摆降导致的时钟脉冲失真。在本文中,作者讨论了不同的技术,使我们能够最大限度地减少脉冲宽度故障,作为限制器件操作频率的机制。本文提出了一种简单而新颖的检测和诊断脉宽故障的技术。给出了40nm百万栅极工业SoC的硅结果,以表明脉冲宽度退化对器件性能的影响,并评估了所提出的模式生成技术的有效性。
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A Silicon Testing Strategy for Pulse-Width Failures
With the increasing clock frequencies to multiple Gigahertz and increasing need to achieve it at lower voltages for keeping operating power lower, frequency of operation is not only limited by the data path delay scaling but also by the behavior of clock signals. Failures induced by violation of minimum clock pulse width required, at higher frequencies is more commonly seen due to increased operating frequencies and usage of voltage scaling techniques for achieving higher frequencies [1]. Silicon failures caused by minimum pulse width violation due to clock shrinkage can be due to variety of reasons right from duty cycle distortion at clock generator (PLL) to clock pulse distortion due to slew degradation along the clock path. In this paper authors discuss different techniques that enable us to minimize pulse width failures as the mechanism that limit the frequency of operation of the device. In this paper we propose a simple and novel technique to detect and diagnose pulse width failures. Silicon results from 40nm multi-million gate industrial SoC is presented to indicate the effects of pulse width degradation on performance of the device and to evaluate the effectiveness of the proposed pattern generation technique.
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