{"title":"采用差动内菱形结构可开关电感的双频正交压控振荡器","authors":"P. Tsai, Tzuen-Hsi Huang, Yu-Ting Chen","doi":"10.1049/iet-cds.2013.0098","DOIUrl":null,"url":null,"abstract":"A dual-band quadrature voltage-controlled oscillator (QVCO) with high figure-of-merits (FOMs) and cost-area efficiency is presented by integrating with differential inner-diamond-structure switchable inductors which have improved performances. This proposed QVCO is fabricated in a 0.18-μm complementary metal-oxide semiconductor process with an active-region area of 0.61 mm2. The QVCO core totally consumes 6.8 mA from 1.8 V supply voltage. The frequency tuning ranges are 120 MHz (from 3.18 to 3.3 GHz) for the low-band and 500 MHz (from 6.94 to 7.44 GHz) for the high-band, while the tuning voltage rises from 0 to 1.8 V. The best phase noises with an offset frequency of 1 MHz from the oscillation frequency in the low- and high-bands are −121.9 and −117.5 dBc/Hz, respectively. The measured phase errors in both high-band and low-band are less than 1°. The calculated FOMs, no matter the switch is off or on, are better than −180 dBc/Hz.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Dual-band quadrature voltage-controlled oscillator using differential inner-diamond-structure switchable inductor\",\"authors\":\"P. Tsai, Tzuen-Hsi Huang, Yu-Ting Chen\",\"doi\":\"10.1049/iet-cds.2013.0098\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A dual-band quadrature voltage-controlled oscillator (QVCO) with high figure-of-merits (FOMs) and cost-area efficiency is presented by integrating with differential inner-diamond-structure switchable inductors which have improved performances. This proposed QVCO is fabricated in a 0.18-μm complementary metal-oxide semiconductor process with an active-region area of 0.61 mm2. The QVCO core totally consumes 6.8 mA from 1.8 V supply voltage. The frequency tuning ranges are 120 MHz (from 3.18 to 3.3 GHz) for the low-band and 500 MHz (from 6.94 to 7.44 GHz) for the high-band, while the tuning voltage rises from 0 to 1.8 V. The best phase noises with an offset frequency of 1 MHz from the oscillation frequency in the low- and high-bands are −121.9 and −117.5 dBc/Hz, respectively. The measured phase errors in both high-band and low-band are less than 1°. The calculated FOMs, no matter the switch is off or on, are better than −180 dBc/Hz.\",\"PeriodicalId\":120076,\"journal\":{\"name\":\"IET Circuits Devices Syst.\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IET Circuits Devices Syst.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/iet-cds.2013.0098\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/iet-cds.2013.0098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-band quadrature voltage-controlled oscillator using differential inner-diamond-structure switchable inductor
A dual-band quadrature voltage-controlled oscillator (QVCO) with high figure-of-merits (FOMs) and cost-area efficiency is presented by integrating with differential inner-diamond-structure switchable inductors which have improved performances. This proposed QVCO is fabricated in a 0.18-μm complementary metal-oxide semiconductor process with an active-region area of 0.61 mm2. The QVCO core totally consumes 6.8 mA from 1.8 V supply voltage. The frequency tuning ranges are 120 MHz (from 3.18 to 3.3 GHz) for the low-band and 500 MHz (from 6.94 to 7.44 GHz) for the high-band, while the tuning voltage rises from 0 to 1.8 V. The best phase noises with an offset frequency of 1 MHz from the oscillation frequency in the low- and high-bands are −121.9 and −117.5 dBc/Hz, respectively. The measured phase errors in both high-band and low-band are less than 1°. The calculated FOMs, no matter the switch is off or on, are better than −180 dBc/Hz.