快速瞬态低差调节器与欠冲和沉降时间减少技术

Sung-hwan Lee, I. Kwon
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摘要

本文提出了一种采用欠调和减少稳定时间技术的无外部电容低差(LDO)稳压器,以实现快速的瞬态响应。在LDO中,采用反馈电容代替复杂的电压尖峰检测电路,在不消耗额外静态电流的情况下降低欠冲电压和稳定时间。当负载瞬态响应中出现欠调或过调电压时,通过增加流过反馈电容的电流来增加通晶体管的栅极放电电流或栅极充电电流,从而降低欠调电压和稳定时间。采用交叉耦合自适应偏置单级误差放大器,提高了在低静态电流消耗下不需要外部电容的稳定性。该稳压器采用0.18 μm CMOS工艺,在最小负载电流为0.1 mA时的静态电流为3.0 μA。与传统的LDO稳压器相比,该稳压器在不消耗额外静态电流的情况下,将欠冲电压降低了53.3%,稳定时间降低了55.5%。
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Fast transient low-dropout regulator with undershoot and settling time reduction technique
This article proposes an external capacitor-less low-dropout (LDO) regulator with undershoot and settling time reduction technique for fast transient response. In the proposed LDO, a feedback capacitor is applied instead of a complicated voltage-spike detection circuit to reduce undershoot voltage and settling time without consuming additional quiescent current. When an undershoot or overshoot voltage occurs in the load transient response, the undershoot voltage and settling time are reduced by increasing the gate discharging current or gate charging current of the pass transistor by the current flowing through the feedback capacitor. An adaptively biased single-stage error amplifier with a cross-coupled pair is used to improve stability without external capacitors at low quiescent current consumption. The proposed LDO regulator is implemented with a 0.18 μm CMOS process and consumes a quiescent current of 3.0 μA at a minimum load current of 0.1 mA. Compared with the conventional LDO regulator, the proposed LDO regulator reduces the undershoot voltage by 53.3% and the settling time by 55.5% without consuming additional quiescent current.
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