基于量子阱电荷发射的新型高速晶体管

A. Kastalsky, A. Grinberg
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Novel High-speed Transistor Based On Charge Emission From A Quantum Well
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A Self-Aligned AlGaAs/GaAs Heterostructure Bipolar Transistor With Non Alloyed Graded-Gap Ohmic Contacts To The Base And Emitter Advanced Device Fabrication With Angled Chlorine Ion Beam Assisted Etching Sub-100 nm Gate Length GaAs MESFETs Fabricated By Molecular Beam Epitaxy And Electron Beam Lithography Operation Of a p-channel, GaAs/(In,Ga)As, Strained Quantum Well Field-effect Transistor At 4 K AlGaAs/GaAs Heterojunction Bipolar Transistors For Power Applications
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