Sung Chan Park, B. Han, J. Ahn, B. Ahn, Donghwan Kim
{"title":"(CdCl/sub 2/+CdS)气氛下CdS退火对CdTe电池性能的影响","authors":"Sung Chan Park, B. Han, J. Ahn, B. Ahn, Donghwan Kim","doi":"10.1109/PVSC.1997.654145","DOIUrl":null,"url":null,"abstract":"To increase grain size, solution-grown CdS films were annealed at 560/spl deg/C in a (CdCl/sub 2/+CdS) atmosphere, instead of CdCl/sub 2/ only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E/sub g/, compared to that of CdS films annealed at 400/spl deg/C for 30 min in H/sub 2/. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl/sub 2/+CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"254 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of CdS annealing in (CdCl/sub 2/+CdS) atmosphere on CdTe cells\",\"authors\":\"Sung Chan Park, B. Han, J. Ahn, B. Ahn, Donghwan Kim\",\"doi\":\"10.1109/PVSC.1997.654145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To increase grain size, solution-grown CdS films were annealed at 560/spl deg/C in a (CdCl/sub 2/+CdS) atmosphere, instead of CdCl/sub 2/ only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E/sub g/, compared to that of CdS films annealed at 400/spl deg/C for 30 min in H/sub 2/. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl/sub 2/+CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"254 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.654145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of CdS annealing in (CdCl/sub 2/+CdS) atmosphere on CdTe cells
To increase grain size, solution-grown CdS films were annealed at 560/spl deg/C in a (CdCl/sub 2/+CdS) atmosphere, instead of CdCl/sub 2/ only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E/sub g/, compared to that of CdS films annealed at 400/spl deg/C for 30 min in H/sub 2/. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl/sub 2/+CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.
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