嵌入式应用的STT MRAM开发及其与BEOL工艺的集成

Technical report of IEICE. ICD Pub Date : 2012-06-04 DOI:10.1149/ma2012-02/37/2814

T. Sugii, Y. Iba, M. Aoki, H. Noshiro, K. Tsunoda, A. Hatada, M. Nakabayashi, Y. Yamazaki, A. Takahashi, C. Yoshida

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引用次数: 1

摘要

在本文中，我们报告了我们的自旋传递扭矩磁性RAM (STT-MRAM)的开发现状及其与嵌入式应用300毫米设备BEOL工艺的集成。我们的STT-MRAM低功耗技术具有顶钉磁隧道结(MTJ)，应变工程和自然氧化MgO势垒。我们的集成技术具有高选择性蚀刻，具有三级抗蚀剂，硬掩膜和自对齐接触工艺。我们将MRAM集成到300mm BEOL中，其中MTJ集成在Cu互连之间。这些特性描述如下。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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STT MRAM Development and Its Integration with BEOL Process for Embedded Applications

Introduction In this paper, we report the current status of our spintransfer torque magnetic RAM (STT-MRAM) development and its integration with the BEOL process for embedded applications with 300-mm facilities. Our STT-MRAM technology for low power dissipation features a top-pinned magnetic tunnel junction (MTJ), strain-engineering, and a naturally oxidized MgO barrier. Our integration technology features highly selective etching with triple-level resist, Ta hard mask, and a selfaligned contact process. We integrated our MRAM into 300-mm BEOL, where the MTJ is integrated between Cu interconnects. These features are described below.

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