误码率<4E-8的无损、抗建模攻击强PUF

Yan He, Qixuan Yu, Kaiyuan Yang
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引用次数: 1

摘要

强物理不可克隆函数(spuf)通过生成指数数量的特定于设备的挑战响应对(CRPs),是loT边缘设备低成本认证的有希望的解决方案。由于挑战-响应映射中缺乏非线性,早期的SPUF设计容易受到机器学习(ML)建模攻击[1]。最近的研究表明,通过将熵源与非线性操作(如entropy LUT[2]、AES S-box[3]或异或网络[4])结合起来,spfs可以被设计成具有抗ML建模的弹性。他们使用超过0.1M的训练crp对已知的黑盒ML建模攻击实现了很高的抵抗力。在这些抗ml的强PUF设计中,一个关键的挑战是确保熵源(ES)在环境变化下的稳定性,因为少量的不稳定ES将导致更大比例的不稳定CRPs。不稳定的CRP需要被丢弃,这样可以减少可用的认证尝试次数,而不会复用CRP。它们也是一个潜在的弱点,可以利用基于可靠性的攻击来促进机器学习建模[5]。[2]采用高温下一小时加速时效的方法消除了ES的不稳定性,但测试成本较高。[3]通过对多个温度点下的ES进行评估,过滤掉不稳定的crp,得到了准确的ES不稳定图。ES的外部访问点对于直接评估是必要的,它代表了另一个潜在的攻击点。[4]提出了一种特殊的光刻步骤来随机化互连,提供比CMOS变化更稳定的ES。但在大规模生产中,额外的非常规制造步骤是不可取的。
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A Lossless and Modeling Attack-Resistant Strong PUF with <4E-8 Bit Error Rate
Strong physically unclonable functions (SPUFs) are promising solutions for low-cost authentication of loT edge devices, by generating an exponential number of device-specific challenge-response pairs (CRPs). Early SPUF designs are vulnerable against machine learning (ML) modeling attacks due to the lack of nonlinearity in challenge-to-response mapping [1]. Recent studies have shown that SPUFs can be designed with resiliency against ML modeling by incorporating entropy sources with non-linear operations such as Entropy LUT [2], AES S-box [3], or XOR network [4]. They achieved high resistance against known black-box ML modeling attacks with more than 0.1M training CRPs. A key challenge in these ML-resistant Strong PUF designs is ensuring the entropy sources (ES) stability under environmental variations, because a small number of unstable ES will lead to a much larger portion of unstable CRPs. The unstable CRPs need to be discarded, which reduces the number of available authentication attempts without CRP reuse. They are also a potential weak point that can be exploited to facilitate ML modeling using reliability-based attacks [5]. [2] eliminates the ES instability by hour-long accelerated aging at a high temperature, which induces a high testing cost. [3] creates an accurate ES instability map by evaluating ES under multiple temperature points and filtering out the unstable CRPs. An external access point to the ES is necessary for direct evaluation, representing another potential attack point. [4] proposes a special lithography step to randomize the interconnect, providing a more stable ES than CMOS variations. But the extra unconventional fabrication steps are undesirable in mass production.
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