J. Bergervoet, D. Leenaerts, G. D. Jong, E. V. D. Heijden, J. Lobeek, A. Simin
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引用次数: 5
摘要
将演示用于WCDMA蜂窝基础设施应用(例如基站)的硅集成LNA。LNA设计用于1.92-1.98GHz频段，在27°C时达到0.7dB NF，在65°C时达到1.1 db NF。输出IP3在27°C时为+40dBm，在65°C时为+37dBm，输入输出回波损耗均优于20dB。旁路模式和可变衰减也提供，以应付大的输入信号。双模MMIC封装在单一层压板上。整个解决方案从5V电源中最大消耗197mA。
A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS
A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92–1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.
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