{"title":"利用IrOx纳米点改善高κ AlOx交叉点的阻性开关记忆参数","authors":"W. Banerjee, S. Maikap","doi":"10.1109/VLSI-TSA.2012.6210126","DOIUrl":null,"url":null,"abstract":"The improvement in resistive switching memory parameters by embedding IrO<sub>x</sub> nanodots in IrO<sub>x</sub>/AlO<sub>x</sub>/IrO<sub>x</sub> NDs/AlO<sub>x</sub>/W cross-point structure is reported. The fabricated memory devices exhibit MLC operation of both LRS and HRS, excellent read endurance of >;10<sup>6</sup> times, program/erase endurance of >;10<sup>5</sup> cycles, robust data retention of >;10<sup>4</sup>s at 125°C with a small operation voltage of ±2V and a low CC of <;200 μA.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improvement of resistive switching memory parameters using IrOx Nanodots in high-κ AlOx Cross-Point\",\"authors\":\"W. Banerjee, S. Maikap\",\"doi\":\"10.1109/VLSI-TSA.2012.6210126\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The improvement in resistive switching memory parameters by embedding IrO<sub>x</sub> nanodots in IrO<sub>x</sub>/AlO<sub>x</sub>/IrO<sub>x</sub> NDs/AlO<sub>x</sub>/W cross-point structure is reported. The fabricated memory devices exhibit MLC operation of both LRS and HRS, excellent read endurance of >;10<sup>6</sup> times, program/erase endurance of >;10<sup>5</sup> cycles, robust data retention of >;10<sup>4</sup>s at 125°C with a small operation voltage of ±2V and a low CC of <;200 μA.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"90 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210126\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement of resistive switching memory parameters using IrOx Nanodots in high-κ AlOx Cross-Point
The improvement in resistive switching memory parameters by embedding IrOx nanodots in IrOx/AlOx/IrOx NDs/AlOx/W cross-point structure is reported. The fabricated memory devices exhibit MLC operation of both LRS and HRS, excellent read endurance of >;106 times, program/erase endurance of >;105 cycles, robust data retention of >;104s at 125°C with a small operation voltage of ±2V and a low CC of <;200 μA.
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