具有超电流增益的多晶硅发射极BICFET

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496423

W.L. Guo, Y. Song, M. Green, M.K. Movvej-Farshi

{"title":"具有超电流增益的多晶硅发射极BICFET","authors":"W.L. Guo, Y. Song, M. Green, M.K. Movvej-Farshi","doi":"10.1109/TENCON.1995.496423","DOIUrl":null,"url":null,"abstract":"The BICFET with an emitter structure of poly-Si(n/sup +/)-thin insulator-semiconductor tunnel junction has been fabricated and measured. The small-signal current gain (G) of this device is in excess of 10/sup 6/ at low current level and the explanation for this high G has been made.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polysilicon emitter BICFET with super-current gain\",\"authors\":\"W.L. Guo, Y. Song, M. Green, M.K. Movvej-Farshi\",\"doi\":\"10.1109/TENCON.1995.496423\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The BICFET with an emitter structure of poly-Si(n/sup +/)-thin insulator-semiconductor tunnel junction has been fabricated and measured. The small-signal current gain (G) of this device is in excess of 10/sup 6/ at low current level and the explanation for this high G has been made.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496423\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

制作并测量了具有多晶硅(n/sup +/)-薄绝缘体-半导体隧道结发射极结构的BICFET。该器件的小信号电流增益(G)在低电流水平下超过10/sup 6/，并对高G的原因进行了解释。

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Polysilicon emitter BICFET with super-current gain

The BICFET with an emitter structure of poly-Si(n/sup +/)-thin insulator-semiconductor tunnel junction has been fabricated and measured. The small-signal current gain (G) of this device is in excess of 10/sup 6/ at low current level and the explanation for this high G has been made.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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