基于AlGaN的UVC激光器量子阱宽度依赖性研究

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Pub Date : 2019-08-01 DOI:10.1109/RAPID.2019.8864414

Q. Guo, R. Kirste, P. Reddy, S. Mita, Y. Guan, R. Collazo, Z. Sitar

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摘要

研究了井宽对AlGaN激光器的影响。量子阱设计对激光阈值和光增益有显著影响。由于降低了QCSE，在3nm井宽中实现了5 kw/cm2的低阈值。

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Quantum Well-Width Dependence Study on AlGaN Based UVC Laser

A study of the well-width impact on the AlGaN laser is presented. The laser threshold and optical gain are significantly influenced by the quantum well design. A low threshold of 5 kw/cm2 is achieved in the 3 nm well width due to a reduced QCSE.

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2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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