单轴机械应力对饱和状态下FD SOI nmosfet低频噪声的影响

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188929

M. A. S. de Saouza, R. T. Doria, M. Pavanello, C. Claeys, E. Simoen

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引用次数: 0

摘要

本文研究了饱和状态下机械应力对平面SOI晶体管低频噪声的影响。对几个通道长度进行了测量，结果表明，对于与通道长度无关的应变器件，低频噪声的降低是有效的，并且这种降低对于较小的通道长度更有效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation

This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths.

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2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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