Analysis of high frequency effects in the intrinsic part of nano-metre scale MOS devices in millimeter wave band

Distributed effects may appear in active devices in mm-wave CMOS integrated design. In this paper we have analyzed the distributed effects in the intrinsic MOS transistor. Non-quasi static effect has been reviewed and its importance in mm-wave band has been demonstrated by simulations in the foundry design kit for STMicroelectronics 90nm CMOS technology. The distributed effect of MOS transistor has been analyzed and modeled and closed form equations have been derived to calculate Y parameters of the transistor, considering the distributed nature of the transistor. Analysis results are in excellent agreement with the simulation results. The results show that by using the strategy of double connection to the gate finger the distributed effects can be avoided in millimeter wave band.