Size-dependent characteristics of highly-scalable In2Se3 nanowire phase-change random access memory

Electrical phase transition characteristics of self-assembled In2Se3 nanowire-based phase-change random access memory are presented. Through repeatable phase switching behavior in In2Se3 nanowire, we explored critical device parameters, such as set/reset programming voltage, extremely high resistance ratio (~107), power consumption, thermal resistance by Fourier's law, resistance drift coefficient by power law, etc. Size-dependent properties were observed: a systematic reduction in set/reset voltage and programming power, increase in thermal resistance of amorphous/crystalline phases and decrease in resistance drift coefficient at reset state, all scaling down the nanowire diameter. Such investigations provide an opportunity to develop highly-scalable and thermally efficient nonvolatile memory architecture in the future.