K. Tang, Linjun Wang, Jian Huang, Jijun Zhang, W. Shi, Yiben Xia
{"title":"al掺杂ZnO薄膜的电学和结构特性","authors":"K. Tang, Linjun Wang, Jian Huang, Jijun Zhang, W. Shi, Yiben Xia","doi":"10.1109/IWJT.2010.5475011","DOIUrl":null,"url":null,"abstract":"Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maxmum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and structural properties of Al-doped ZnO films\",\"authors\":\"K. Tang, Linjun Wang, Jian Huang, Jijun Zhang, W. Shi, Yiben Xia\",\"doi\":\"10.1109/IWJT.2010.5475011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maxmum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films.\",\"PeriodicalId\":205070,\"journal\":{\"name\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2010.5475011\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5475011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and structural properties of Al-doped ZnO films
Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maxmum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films.
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