偏置应力诱导的硅基金属间介电体传导机制演化

Yunlong Li, G. Groeseneken, K. Maex, Z. Tokei
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引用次数: 1

摘要

研究了三种硅基金属间介电体在Cu - damascense结构中在偏置应力作用下的实时传导机制演变。在偏置应力过程中间歇插入1 MHz的电容测量和I-V测量,监测传导机制随时间的演变。实验结果表明,电容是恒定的,I-V曲线斜率随着偏置应力的增大而减小,并收敛到初始值的一半。基于这些发现,我们得出结论,传导机制从正常的Frenkel-Poole发射转变为具有偏压应力的“异常”Frenkel-Poole发射
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Bias Stress Induced Conduction Mechanism Evolution in Silica Based Inter-Metal Dielectrics
The real-time conduction mechanism evolution during bias stress of three silica based inter-metal dielectrics in Cu damascene structures was investigated. Capacitance measurements at 1 MHz and I-V measurements were intermittently inserted into the process of bias stress to monitor the conduction mechanism evolution with time. All experiments show that the capacitance is constant and the I-V curve slope decreases with bias stress and converges to the half of the initial value. Based on these findings, we conclude that the conduction mechanism changes from a normal Frenkel-Poole emission to an "abnormal" Frenkel-Poole emission with bias stress
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