A. Tredicucci, R. Kohler, F. Beltram, H. Beere, E. H. Linfield, A. Giles Davies, D. A. Ritchie
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引用次数: 0
摘要
在太赫兹频率发射的单极半导体注入激光器已经被证明。该器件基于GaAs/AlGaAs超晶格中的量子级联方案,在高达50 K (70 K脉冲)的连续波中工作,输出功率为几mW。
Unipolar semiconductor injection lasers emitting at THz frequencies have been demonstrated. The devices, based on the quantum-cascade scheme in GaAs/AlGaAs superlattices, operate in continuous-wave up to 50 K (70 K pulsed) with output powers of several mW.