A 3.5 to 7 GHz Wideband Differential LNA with gm Enhancement for 5G Applications

This paper presents a differential wideband low noise amplifier (LNA) targeting 5G applications in 130 nm TSMC CMOS technology. The proposed LNA is based on the capacitive cross-coupled common-gate (CCC-CG) push-pull architecture. The LNA utilizes inductors for wideband input matching that resonate with the input parasitic capacitors. The CCC-CG structure along with a current-reuse PMOS and NMOS technique enhances transconductance, reducing noise figure (NF) and increasing voltage gain. Post-layout simulation results show that the differential LNA achieves a gain of 21 ±1.5 dB, NF of less than 4 dB and IIP3 of higher than −2.5 dBm over the bandwidth of 3.5 to 7 GHz. The LNA consumes 2.4 mA from 1 V supply, and occupies an active area of 0.24 mm2.