表面粗糙度在有缺陷应力的聚氧化物-聚电容器中增强电流

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI:10.1109/IRWS.2006.305247

L. Sheng, E. De Backer, D. Wojciechowski, J. De Greve, K. Dhondt, S. Boonen, D. Malschaert, E. Snyder

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引用次数: 0

摘要

表面粗糙度增强的电流应力增强了聚氧化物-聚电容器的介电击穿。此外，首次证明了AFM-PSD(功率谱密度)合成所描述的复杂多晶硅表面特征的变化可以成为高电场下恶化介电可靠性的主要“缺陷”

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Surface Roughness Enhanced Current in Defectively Stressing Poly-Oxide-Poly Capacitors

Surface roughness enhanced current stressing is shown to enhance the dielectric breakdown in poly-oxide-poly capacitors. Moreover, it is demonstrated for the first time that the changes of sophisticated polysilicon surface features as depicted by AFM-PSD (power spectral density) synthesis can globally become the dominant "defects" in deteriorating the dielectric reliability under a high electric field

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2006 IEEE International Integrated Reliability Workshop Final Report

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