{"title":"一种标准CMOS-MEMS工艺的新型红外微热计","authors":"Meng-Lieh Sheu, Ji-Yi Chen, M. Li, L. Tsao","doi":"10.1109/ISBB.2014.6820898","DOIUrl":null,"url":null,"abstract":"A novel infrared micro-bolometer realized in CMOS with MEMS post process is proposed. The micro-bolometer is constructed as a metal micro-cavity to enhance its absorptivity of incident infrared energy. Three testkeys with different cavity structure are presented. The measured sensitivity of the testkeys, in the temperature range of 5-75°C, are 9.56 Ω/°C, 8.78 Ω/°C and 9.89 Ω/°C, respectively. The micro-bolometer occupies a chip area of 439×370 μm<sup>2</sup> in 0.18 μm process. It is suitable for application on smart biomedical sensor.","PeriodicalId":265886,"journal":{"name":"2014 IEEE International Symposium on Bioelectronics and Bioinformatics (IEEE ISBB 2014)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel infrared microbolometer in standard CMOS-MEMS process\",\"authors\":\"Meng-Lieh Sheu, Ji-Yi Chen, M. Li, L. Tsao\",\"doi\":\"10.1109/ISBB.2014.6820898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel infrared micro-bolometer realized in CMOS with MEMS post process is proposed. The micro-bolometer is constructed as a metal micro-cavity to enhance its absorptivity of incident infrared energy. Three testkeys with different cavity structure are presented. The measured sensitivity of the testkeys, in the temperature range of 5-75°C, are 9.56 Ω/°C, 8.78 Ω/°C and 9.89 Ω/°C, respectively. The micro-bolometer occupies a chip area of 439×370 μm<sup>2</sup> in 0.18 μm process. It is suitable for application on smart biomedical sensor.\",\"PeriodicalId\":265886,\"journal\":{\"name\":\"2014 IEEE International Symposium on Bioelectronics and Bioinformatics (IEEE ISBB 2014)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Symposium on Bioelectronics and Bioinformatics (IEEE ISBB 2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISBB.2014.6820898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Bioelectronics and Bioinformatics (IEEE ISBB 2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISBB.2014.6820898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel infrared microbolometer in standard CMOS-MEMS process
A novel infrared micro-bolometer realized in CMOS with MEMS post process is proposed. The micro-bolometer is constructed as a metal micro-cavity to enhance its absorptivity of incident infrared energy. Three testkeys with different cavity structure are presented. The measured sensitivity of the testkeys, in the temperature range of 5-75°C, are 9.56 Ω/°C, 8.78 Ω/°C and 9.89 Ω/°C, respectively. The micro-bolometer occupies a chip area of 439×370 μm2 in 0.18 μm process. It is suitable for application on smart biomedical sensor.
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