CMOS射频集成电路中片上电感器的简单建模方法

A. Sánchez-Ramos, J. R. Loo-Yau, E. A. Hernandez-Dominguez, A. Villagran-Gutierrez
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引用次数: 0

摘要

本文提出了一种提取片上电感非对称单$\pi$等效电路元件的解析方法。利用芯片电感的y参数从线性回归中提取元素。在0.5 $\mu{\mathrm{m}}$ CMOS工艺下制造的片上电感器的测量和基于0.13 $\mu{\mathrm{m}}$ CMOS工艺的电磁仿真数据之间的s参数与模型之间的高度相关性验证了所提出的方法在20 GHz范围内的有效性。
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Simple Methodology to Model On-Chip Inductors for CMOS RF Integrated Circuits Design
This work presents an analytical method to extract the elements of the asymmetric single-$\pi$ electrical equivalent circuit of on-chip inductors. The elements are extracted from linear regression using the y-parameters of the chip inductors. The high correlation of the S-parameters between the model and the measurement of an on-chip inductor manufactured under the 0.5 $\mu{\mathrm{m}}$ CMOS process and electromagnetic simulation data based on the 0.13 $\mu{\mathrm{m}}$ CMOS process validates the proposed methodology up to 20 GHz.
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