系统集成采用硅基集成无源器件技术

Liguo Sun, Yinchao Chen, K. Sun
{"title":"系统集成采用硅基集成无源器件技术","authors":"Liguo Sun, Yinchao Chen, K. Sun","doi":"10.1109/RFIT.2012.6401626","DOIUrl":null,"url":null,"abstract":"In this paper, the system on chip (SOC) and system in package (SiP) are discussed as two main approaches for system integration. The system on package (SOP) is introduced with the discussion of the integrated passive device (IPD). IPD based on silicon with high resistance is investigated and the SOP using silicon-based IPD is analyzed. It is found that the silicon-based IPD is a good candidate for the system integration, especially in radio frequency (RF) applications.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"210 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"System integration using silicon-based integrated passive device technology\",\"authors\":\"Liguo Sun, Yinchao Chen, K. Sun\",\"doi\":\"10.1109/RFIT.2012.6401626\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the system on chip (SOC) and system in package (SiP) are discussed as two main approaches for system integration. The system on package (SOP) is introduced with the discussion of the integrated passive device (IPD). IPD based on silicon with high resistance is investigated and the SOP using silicon-based IPD is analyzed. It is found that the silicon-based IPD is a good candidate for the system integration, especially in radio frequency (RF) applications.\",\"PeriodicalId\":187550,\"journal\":{\"name\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"210 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2012.6401626\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401626","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

本文讨论了系统集成的两种主要方式——片上系统(SOC)和封装系统(SiP)。介绍了封装系统(SOP),并对集成无源器件(IPD)进行了讨论。研究了高阻硅基IPD,分析了硅基IPD的SOP。研究发现,硅基IPD是系统集成的理想选择,特别是在射频应用中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
System integration using silicon-based integrated passive device technology
In this paper, the system on chip (SOC) and system in package (SiP) are discussed as two main approaches for system integration. The system on package (SOP) is introduced with the discussion of the integrated passive device (IPD). IPD based on silicon with high resistance is investigated and the SOP using silicon-based IPD is analyzed. It is found that the silicon-based IPD is a good candidate for the system integration, especially in radio frequency (RF) applications.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
5-GHz band linear CMOS power amplifier IC with a novel integrated linearizer for WLAN applications Reconfigurable CMOS divide-by-3/-5 injection-locked frequency divider for dual-mode 24/40 GHz PLL application Microwave waveguide resonator based double negative metamaterial ASIC for wireless ambulatory blood pressure monitoring based on applanation tonometry Characterization of radar absorber based on square patch textured surface
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1