动态可变性对纳米级CMOS技术中SRAM功能和性能的影响

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532008

A. Subirats, X. Garros, J. Mazurier, J. El Husseini, O. Rozeau, G. Reimbold, O. Faynot, G. Ghibaudo

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引用次数: 13

摘要

在本文中，我们证明了快速的氧化物捕获机制可以对电路工作条件下Vt, gm和Id的显著动态变化负责。利用蒙特卡罗模拟对这些变量的影响进行了估计。测量变量对SRAM性能的影响是明显的，因为需要在最小电源电压的~50mV裕量来克服这种影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of dynamic variability on SRAM functionality and performance in nano-scaled CMOS technologies

In this paper we demonstrate that fast oxide trapping mechanism can be responsible for significant dynamic variability of Vt, gm and Id at circuit operating conditions. An estimation of the effect of these variabilities has been made using Monte Carlo simulations. The impact of the measured variabilities on SRAM performance is found appreciable since a margin of ~50mV in the minimum supply voltages is required to overcome this effect.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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