氧化钽基电阻开关器件中导电丝结构和离子迁移行为的密度泛函研究综述

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI:10.1109/INEC.2014.7460431

Satoshi Watanabe, B. Xiao

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引用次数: 1

摘要

我们已经进行了密度泛函计算，以微观理解氧化钽基电阻开关器件。本文讨论了Cu/Ta2O5/Pt和Pt/TaOx/Pt电阻开关器件中导电丝的结构和电性能。我们还讨论了Cu和O离子在这些器件中的迁移行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Review of our density functional study on the structures of conductive filaments and ion migration behaviors in tantalum oxide based resistive switching devices

We have performed density functional calculations toward the microscopic understanding of tantalum oxide based resistive switching devices. In this review, we discuss the structures and electric properties of the conductive filaments in Cu/Ta2O5/Pt and Pt/TaOx/Pt resistive switching devices. We also discuss the migration behaviors of Cu and O ions in these devices.

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2014 IEEE International Nanoelectronics Conference (INEC)

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