脉冲激光熔化红外传感的新型IV族材料

J. Warrender, P. Chow, S. Lim, G. Grzybowski, B. Claflin, James S. Williams
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引用次数: 0

摘要

将杂质掺入IV族材料中可以形成超掺杂或合金层,在红外波长处具有增强的器件响应,否则在此类材料中无法获得。工艺参数会影响层的性能;这一点,加上CMOS兼容性,使它们成为一个有前途的红外光电子平台。
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Novel group IV materials for infrared sensing through pulsed laser melting
Incorporating impurities into group IV materials can form hyperdoped or alloyed layers with enhanced device response at infrared wavelengths otherwise inaccessible in such materials. Processing parameters can influence the layers’ performance; this, along with the CMOS compatibility, makes them a promising platform for IR optoelectronics.
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