J. Warrender, P. Chow, S. Lim, G. Grzybowski, B. Claflin, James S. Williams
{"title":"脉冲激光熔化红外传感的新型IV族材料","authors":"J. Warrender, P. Chow, S. Lim, G. Grzybowski, B. Claflin, James S. Williams","doi":"10.1109/rapid49481.2020.9195683","DOIUrl":null,"url":null,"abstract":"Incorporating impurities into group IV materials can form hyperdoped or alloyed layers with enhanced device response at infrared wavelengths otherwise inaccessible in such materials. Processing parameters can influence the layers’ performance; this, along with the CMOS compatibility, makes them a promising platform for IR optoelectronics.","PeriodicalId":220244,"journal":{"name":"2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel group IV materials for infrared sensing through pulsed laser melting\",\"authors\":\"J. Warrender, P. Chow, S. Lim, G. Grzybowski, B. Claflin, James S. Williams\",\"doi\":\"10.1109/rapid49481.2020.9195683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Incorporating impurities into group IV materials can form hyperdoped or alloyed layers with enhanced device response at infrared wavelengths otherwise inaccessible in such materials. Processing parameters can influence the layers’ performance; this, along with the CMOS compatibility, makes them a promising platform for IR optoelectronics.\",\"PeriodicalId\":220244,\"journal\":{\"name\":\"2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/rapid49481.2020.9195683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/rapid49481.2020.9195683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel group IV materials for infrared sensing through pulsed laser melting
Incorporating impurities into group IV materials can form hyperdoped or alloyed layers with enhanced device response at infrared wavelengths otherwise inaccessible in such materials. Processing parameters can influence the layers’ performance; this, along with the CMOS compatibility, makes them a promising platform for IR optoelectronics.