用于智能物联网应用的0.32 v 151-nW基准电压

Yuntao Wu, Mingyi Chen
{"title":"用于智能物联网应用的0.32 v 151-nW基准电压","authors":"Yuntao Wu, Mingyi Chen","doi":"10.1109/SmartIoT55134.2022.00015","DOIUrl":null,"url":null,"abstract":"In this article, a low-voltage low-power voltage reference used for smart IoT devices is presented. The proposed volt-age reference is supported by subthreshold MOSFETs with compensation of proportional-to-absolute-temperature (PTAT) voltage and complementary-to-absolute-temperature (CTAT) gate-source voltage. A voltage doubler boosts the input voltage so that the reference can operate at an extra low voltage. Implemented with 180 nm CMOS technology, simulation results show that the voltage reference obtains a TC of 12 ppm $/^{\\circ}\\mathrm{C}$ under 0.32 V supply within $\\text{-}20\\ ^{\\circ}\\mathrm{C}$ to 120 $^{\\circ}\\mathbf{C}$. The voltage reference has a power consumption of 151 nW, with a total noise of 0.9 $\\mu \\mathbf{V}$ rms(0.5–10M Hz) and PSRR of −50 dB.","PeriodicalId":422269,"journal":{"name":"2022 IEEE International Conference on Smart Internet of Things (SmartIoT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 0.32-V 151-nW Voltage Reference for Smart IoT Applications\",\"authors\":\"Yuntao Wu, Mingyi Chen\",\"doi\":\"10.1109/SmartIoT55134.2022.00015\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, a low-voltage low-power voltage reference used for smart IoT devices is presented. The proposed volt-age reference is supported by subthreshold MOSFETs with compensation of proportional-to-absolute-temperature (PTAT) voltage and complementary-to-absolute-temperature (CTAT) gate-source voltage. A voltage doubler boosts the input voltage so that the reference can operate at an extra low voltage. Implemented with 180 nm CMOS technology, simulation results show that the voltage reference obtains a TC of 12 ppm $/^{\\\\circ}\\\\mathrm{C}$ under 0.32 V supply within $\\\\text{-}20\\\\ ^{\\\\circ}\\\\mathrm{C}$ to 120 $^{\\\\circ}\\\\mathbf{C}$. The voltage reference has a power consumption of 151 nW, with a total noise of 0.9 $\\\\mu \\\\mathbf{V}$ rms(0.5–10M Hz) and PSRR of −50 dB.\",\"PeriodicalId\":422269,\"journal\":{\"name\":\"2022 IEEE International Conference on Smart Internet of Things (SmartIoT)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Smart Internet of Things (SmartIoT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SmartIoT55134.2022.00015\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Smart Internet of Things (SmartIoT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SmartIoT55134.2022.00015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文介绍了一种用于智能物联网设备的低压低功率电压基准。所提出的基准电压由亚阈值mosfet支持,并具有比例-绝对温度(PTAT)电压和互补-绝对温度(CTAT)门源电压的补偿。电压倍频器提高输入电压,使基准电压可以在一个特别低的电压下工作。仿真结果表明,该基准电压在0.32 V电压下,在$\text{-}20\ \circ}\ mathm {C}$至120 $^{\circ}\mathbf{C}$范围内的TC值为12 ppm $/^{\circ}\ mathbf{C}$。基准电压功耗为151 nW,总噪声为0.9 $\mu \mathbf{V}$ rms(0.5-10M Hz), PSRR为−50 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 0.32-V 151-nW Voltage Reference for Smart IoT Applications
In this article, a low-voltage low-power voltage reference used for smart IoT devices is presented. The proposed volt-age reference is supported by subthreshold MOSFETs with compensation of proportional-to-absolute-temperature (PTAT) voltage and complementary-to-absolute-temperature (CTAT) gate-source voltage. A voltage doubler boosts the input voltage so that the reference can operate at an extra low voltage. Implemented with 180 nm CMOS technology, simulation results show that the voltage reference obtains a TC of 12 ppm $/^{\circ}\mathrm{C}$ under 0.32 V supply within $\text{-}20\ ^{\circ}\mathrm{C}$ to 120 $^{\circ}\mathbf{C}$. The voltage reference has a power consumption of 151 nW, with a total noise of 0.9 $\mu \mathbf{V}$ rms(0.5–10M Hz) and PSRR of −50 dB.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
SmartCare: Detecting Heart Failure and Diabetes Using Smartwatch A Subspace Fusion of Hyper-parameter Optimization Method Based on Mean Regression A hybrid SOM and HMM classifier in a Fog Computing gateway for Ambient Assisted Living Environment The transitional phase of Boost.Asio and POCO C++ networking libraries towards IPv6 and IoT networking security Automotive Components Localization and De-globalization Purchasing Strategy
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1