{"title":"f类功率放大器的驱动波形[GaAs mesfet]","authors":"A. Rudiakova, V. Krizhanovski","doi":"10.1109/MWSYM.2000.861076","DOIUrl":null,"url":null,"abstract":"High efficiency of power amplifiers can be reached if the active device output current and voltage have the maximally flat waveforms. The existing conventional conditions to provide such waveforms are not sufficient. The additional conditions were obtained in this paper.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Driving waveforms for class-F power amplifiers [GaAs MESFETs]\",\"authors\":\"A. Rudiakova, V. Krizhanovski\",\"doi\":\"10.1109/MWSYM.2000.861076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High efficiency of power amplifiers can be reached if the active device output current and voltage have the maximally flat waveforms. The existing conventional conditions to provide such waveforms are not sufficient. The additional conditions were obtained in this paper.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.861076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.861076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Driving waveforms for class-F power amplifiers [GaAs MESFETs]
High efficiency of power amplifiers can be reached if the active device output current and voltage have the maximally flat waveforms. The existing conventional conditions to provide such waveforms are not sufficient. The additional conditions were obtained in this paper.
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