K. Park, J. Moon, Jae Gak Kim, S. Chung, M. Oh, Jin Jang
{"title":"PECVD沉积氮掺杂DLC薄膜的场发射特性","authors":"K. Park, J. Moon, Jae Gak Kim, S. Chung, M. Oh, Jin Jang","doi":"10.1109/IVMC.1996.601821","DOIUrl":null,"url":null,"abstract":"The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: /spl sigma//sub 0/=/spl sigma//sub 00/exp(AE/sub a/) with A=19 eV/sup -1/ and /spl sigma//sub 00/=9/spl times/10/sup -8/ S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Field emission of nitrogen doped DLC films deposited by PECVD\",\"authors\":\"K. Park, J. Moon, Jae Gak Kim, S. Chung, M. Oh, Jin Jang\",\"doi\":\"10.1109/IVMC.1996.601821\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: /spl sigma//sub 0/=/spl sigma//sub 00/exp(AE/sub a/) with A=19 eV/sup -1/ and /spl sigma//sub 00/=9/spl times/10/sup -8/ S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents.\",\"PeriodicalId\":384104,\"journal\":{\"name\":\"9th International Vacuum Microelectronics Conference\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Vacuum Microelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVMC.1996.601821\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Vacuum Microelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVMC.1996.601821","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Field emission of nitrogen doped DLC films deposited by PECVD
The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: /spl sigma//sub 0/=/spl sigma//sub 00/exp(AE/sub a/) with A=19 eV/sup -1/ and /spl sigma//sub 00/=9/spl times/10/sup -8/ S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents.
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