毫米波接收器组件使用封装hemt

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.187920

H. Ashoka, V. Waris, P. Martin

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引用次数: 2

摘要

利用封装的商用hemt(高电子迁移率晶体管)和波导匹配电路，开发了30 GHz的窄带低噪声放大器(LNA)和混频器。四级HEMT LNA在30 GHz时提供26 dB增益和2.8 dB噪声系数。HEMT混频器提供0.5 dB的转换增益和5db的噪声系数。设计特点是非常简单的结构和调谐

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Millimetre wave receiver components using packaged HEMTs

A narrowband low-noise amplifier (LNA) and a mixer at 30 GHz have been developed using packaged commercial HEMTs (high electron mobility transistors) and waveguide matching circuits. The four-stage HEMT LNA provided 26 dB gain and a 2.8 dB noise figure at 30 GHz. The HEMT mixer provided a conversion gain of 0.5 dB with 5 dB noise figure. The design features very simple construction and tuning.<>

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1992 IEEE Microwave Symposium Digest MTT-S

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