{"title":"硅MOSFET射频开关的瞬态开关行为","authors":"R. Caverly, J.J. Manosca","doi":"10.1109/SMIC.2008.51","DOIUrl":null,"url":null,"abstract":"Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Transient Switching Behavior in Silicon MOSFET RF Switches\",\"authors\":\"R. Caverly, J.J. Manosca\",\"doi\":\"10.1109/SMIC.2008.51\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.\",\"PeriodicalId\":350325,\"journal\":{\"name\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2008.51\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.51","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transient Switching Behavior in Silicon MOSFET RF Switches
Silicon MOS devices are seeing increased use in highly integrated RFICs. This paper shows the results of an investigation of the impact of the external gate bias resistance as well as the distributed RC gate effect on switching speed in these devices. A model is presented with both simulations and measured data used to verify the model. The model also shows that the optimal number of gate fingers in the 10 to 20 range.
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