{"title":"线性掺杂谱线的有限宽度杂质源模型","authors":"Tommy M. L. Lai, J. Sin, P. Ko","doi":"10.1109/TENCON.1995.496432","DOIUrl":null,"url":null,"abstract":"In order to provide high breakdown voltage in thin-film SOI devices, a linear doping profile in the drift region is needed. The linear doping profile can be obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide with subsequent impurity implantation and drive-in processes. In this paper, an analytical model is presented to describe the impurity distribution of a finite width impurity source which is used to form the linear doping profile. This model provides a basis for determination of the slits width and silts spacing which are required to implement the linear doping profile.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A finite width impurity source model for linear doping profiles\",\"authors\":\"Tommy M. L. Lai, J. Sin, P. Ko\",\"doi\":\"10.1109/TENCON.1995.496432\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to provide high breakdown voltage in thin-film SOI devices, a linear doping profile in the drift region is needed. The linear doping profile can be obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide with subsequent impurity implantation and drive-in processes. In this paper, an analytical model is presented to describe the impurity distribution of a finite width impurity source which is used to form the linear doping profile. This model provides a basis for determination of the slits width and silts spacing which are required to implement the linear doping profile.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496432\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A finite width impurity source model for linear doping profiles
In order to provide high breakdown voltage in thin-film SOI devices, a linear doping profile in the drift region is needed. The linear doping profile can be obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide with subsequent impurity implantation and drive-in processes. In this paper, an analytical model is presented to describe the impurity distribution of a finite width impurity source which is used to form the linear doping profile. This model provides a basis for determination of the slits width and silts spacing which are required to implement the linear doping profile.